ST Micro M29W400DT55N6 4 Mbit (512Kb x8 / 256Kb x16) 3V Flash Memory TSOP-48

Description

ST Micro M29W400DT55N6 4 Mbit (512Kb x8 / 256Kb x16) 3V Flash Memory TSOP-48
The M29W400D is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The blocks in the memory are asymmetrically arranged, see Figures 6 and 7, Block Addresses. The first or last 64 Kbytes have been divided into four additional blocks. The 16 Kbyte Boot Block can be used for small initialization code to start the microprocessor, the two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining 32K is a small Main Block where the application may be stored. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. The memory is offered in SO44, TSOP48 (12 x 20mm), TFBGA48 0.8mm pitch (6 x 9mm and 6 x8mm) packages. The memory is supplied with all the bits erased (set to ’1’).
SPECIFICATIONS
Manufacturer: ST Micro
Part Number: M29W400DT55N6
Product Category: NOR Flash
Mounting Style: SMD/SMT
Package / Case: TSOP-48
Series: M29W
Memory Size: 4 Mbit
Supply Voltage - Min: 2.7 V
Supply Voltage - Max: 3.6 V
Active Read Current - Max: 10 mA
Interface Type: Parallel
Organization: 512 k x 8/256 k x 16
Data Bus Width: 8 bit/16 bit
Timing Type: Asynchronous
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 85 C
Memory Type: NOR
Speed: 55 ns
Architecture: Block Erase
Supply Current - Max: 10 mA
Moisture Sensitive: Yes
Product Type: NOR Flash
Subcategory: Memory & Data Storage
FEATURES
SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase and Read
ACCESS TIME: 55 ns
PROGRAMMING TIME
– 10μs per Byte/Word typical
11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
– Read and Program another Block duringErase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
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